Method and structure for making self-aligned contacts
US6214743A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 4, 1999 |
| Grant date | Apr 10, 2001 |
| Priority date | — |
| Expiry date | Jun 4, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0332
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
According to one embodiment (100), a method of forming contacts may include forming structures that include sidewalls (102). A first insulating layer can be deposited (104). A second insulating layer can then be deposited over the first insulating layer (106). The second insulating layer can be patterned to form a hard etch mask (108). Contact holes can be etched through the second insulating layer using the hard etch mask as a contact hole etch mask (110). A second insulating layer can have a dielectric constant that is low with respect to other hard etch mask materials, such as silicon nitride. A hard etch mask formed from a second insulating layer can result in contact holes having lower aspect ratios than conventional approaches.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.