Semiconductor device and method of manufacturing the same where the nitrogen concentration in an oxynitride insulating layer is varied
US6215163A · kind A · utility
17Cited by
23References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 29, 1997 |
| Grant date | Apr 10, 2001 |
| Priority date | — |
| Expiry date | Dec 29, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/68
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device of the present invention comprises a gate insulating layer made of a oxynitride formed on a semiconductor substrate, a gate electrode formed on the gate insulating layer, source/drain regions formed in the semiconductor substrate on both sides of the gate electrode and including impurity, and a oxynitride insulating layer covering the source/drain regions on a surface of the semiconductor substrate and having nitrogen concentration distribution which is different from that of the gate insulating layer along a film thickness direction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.