Manufacturing method of a bottom plate
US6218239A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 17, 1998 |
| Grant date | Apr 17, 2001 |
| Priority date | — |
| Expiry date | Nov 17, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/0335
Abstract
The invention provides a manufacturing method of forming a bottom plate for a capacitor on a substrate, wherein the substrate comprises a MOS transistor having a gate and a pair of source/drain regions. A crown-liked conductive plate is formed over an insulation oxide layer and a contact plug. The crown-liked conductive plate penetrates the insulation layer and the stop layer, wherein the bottom of the crown-like conductive plate is electrically connected to the contact plug. The crown-like conductive plate, served as the bottom plate for a DRAM capacitor, is composed of tungsten silicide or a combination of a tungsten nitride layer and a tungsten layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.