Semiconductor device and method for producing the same
US6218299A · kind A · utility
22Cited by
11References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 6, 1998 |
| Grant date | Apr 17, 2001 |
| Priority date | — |
| Expiry date | Jul 6, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02274
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
For example, in a plasma processing system, C.sub.4 F.sub.8 gas and C.sub.2 H.sub.4 gas are introduced as film-forming gases at flow rates of 60 sccm and 30 sccm, respectively, under the conditions of a pressure of 0.2 Pa, a microwave power of 2.7 kW, a radiofrequency power of 1.5 kW, and a wafer temperature of 350.degree. C. At the same time, a plasma gas is also introduced at a flow rate of 150 sccm to form CF film 13 having an F content of, for example, 22% on silicon substrate 11. This CF film 13 has a relative dielectric constant of 2.4.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.