Integrated capacitor with high voltage linearity and low series resistance
US6218723A · kind A · utility
0Cited by
5References
35Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 3, 1999 |
| Grant date | Apr 17, 2001 |
| Priority date | — |
| Expiry date | Sep 3, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/68
Abstract
A capacitor integrated on a silicon substrate includes a first electrode made of highly doped polysilicon, a thin silicon oxide layer, a second electrode made of polysilicon and a silicide layer covering the second electrode. The second electrode has a high dopant concentration at its interface with the silicon oxide layer and a low or medium dopant concentration at its interface with the silicide layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.