Semiconductor device having a titanium-aluminum compound
US6218733A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 6, 1994 |
| Grant date | Apr 17, 2001 |
| Priority date | — |
| Expiry date | Jun 6, 2014 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S257/915
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention includes a process for forming an intermetallic layer and a device formed by the process. The process includes a reaction step where a metal-containing layer reacts with a metal-containing gas, wherein the metals of the layer and gas are different. In one embodiment of the present invention, titanium aluminide may be formed on the sides of an interconnect. The process may be performed in a variety of equipment, such as a furnace, a rapid thermal processor, a plasma etcher, and a sputter deposition machine. The reaction to form the intermetallic layer is typically performed while the substrate is at a temperature no more than 700 degrees Celsius.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.