High temperature plasma-assisted diffusion
US6221165A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 1, 1999 |
| Grant date | Apr 24, 2001 |
| Priority date | — |
| Expiry date | Jul 1, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/2255
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An apparatus and method for performing thermal diffusion on the substrate of a device such as a spherical shaped semiconductor. To this end, one embodiment provides an enclosure containing a plurality of apertures and a plasma chamber. A plasma generator for producing a plasma torch is incorporated with the plasma chamber, the plasma generator including a conductor coil electrically connected to a radio frequency energy generator. A first conduit registering with a first opening in the enclosure allows the semiconductor devices to be received into the plasma chamber. A second conduit registering with a second opening in the enclosure allows the semiconductor devices to exit the plasma chamber. Processing fluids are injected into the plasma chamber so that a doping material from the process fluid is ionized at an upper portion of the plasma torch to form a high density diffusion plasma. This high density diffusion plasma supports a quick and uniform diffusion of the doping material into the substrate of the semiconductor devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.