Resist image reversal by means of spun-on-glass

US6221562A · kind A · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Diane C. Boyd · Lagrangeville, US
• Toshiharu Furukawa · South Burlington, US
• Steven J. Holmes · Colchester, US
• William H. Ma · Wappingers Falls, US
• Paul A. Rabidoux · Winooski, US
• David V. Horak · South Burlington, US

Key dates

• Filing date: Nov 13, 1998
• Grant date: Apr 24, 2001
• Expiry date: Nov 13, 2018

Classification

• Technology area (CPC G): Physics
• CPC primary: G03F7/40
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

An image reversal method of turning hybrid photoresist spaces into resist lines for sub-feature size applications. The sub-feature size space width of the high resolution hybrid photoresist is largely independent of the lithographic process and mask reticles. These sub-feature size spaces formed by the hybrid resist are then turned into sub-feature size lines using Spin-On-Glass, SOG. The SOG is first coated over the entire patterned hybrid resist to fill in the hybrid spaces and cover the photoresist. SOG is then recessed back to expose the photoresist layer. The exposed photoresist is then removed. The sub-feature size lines are then left behind as a mask to pattern the same onto the underlying films on the substrate.