Color image sensor with embedded microlens array

US6221687A · kind A · utility

Assignee

• TOWER PARTNERS SEMICONDUCTOR CO., LTD. · IL

Inventor

• Irit Abramovich · Alon HaGalil, IL

Key dates

• Filing date: Dec 23, 1999
• Grant date: Apr 24, 2001
• Expiry date: Dec 23, 2019

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F39/8063

Abstract

A method for producing a color CMOS image sensor including a matrix of pixels (e.g., CMOS APS cells) that are fabricated on a semiconductor substrate. A silicon-nitride layer is deposited on the upper surface of the pixels, and is etched using a reactive ion etching (RIE) process to form microlenses. A protective layer including a lower color transparent layer formed from a polymeric material, a color filter layer and an upper color transparent layer are then formed over the microlenses. Standard packaging techniques are then used to secure the upper color transparent layer to a glass substrate.