Method of manufacturing silicon carbide semiconductor device with high activation rate of impurities
US6221700A · kind A · utility
72Cited by
4References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 28, 1999 |
| Grant date | Apr 24, 2001 |
| Priority date | — |
| Expiry date | Jul 28, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8325
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A surface portion of a p type base region is made amorphous as an amorphous layer by implanting nitrogen ions which serve as impurities and ions which do not serve as impurities. After that, the amorphous layer is crystallized to have a specific crystal structure through solid-phase growth while disposing the impurities at lattice positions of the crystal structure. As a result, a surface channel layer is formed with a high activation rate of the impurities.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.