Method of making polysilicon self-aligned to field isolation oxide

US6221715A · kind A · utility

Assignee

• UNITED MICROELECTRONICS CORP. · TW

Inventor

• Bin Chen · Palo Alto, US

Key dates

• Filing date: Jul 28, 1998
• Grant date: Apr 24, 2001
• Expiry date: Jul 28, 2018

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/0411

Abstract

A technique for forming an integrated circuit device having a self-aligned gate layer. The method includes a variety of steps such as providing a substrate, which is commonly a silicon wafer. Field isolation regions including a first isolation region and a second isolation region are defined in the semiconductor substrate. A recessed region is defined between the first and second trench isolation regions. The isolation regions are made using a reactive ion etching technique. A thickness of material such as polysilicon is deposited overlying or on the first isolation region, the second isolation region, and the active region. A step of selectively removing portions of the thickness of material overlying portions of the first isolation region and the second isolation region is performed, where the removing step forms a substantially planar material region in the recessed region. The substantially planar material region is self-aligned into the recessed region using the removing step.