Method of reducing CMP dishing effect
US6221734A · kind A · utility
4Cited by
4References
10Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jul 15, 1999 |
| Grant date | Apr 24, 2001 |
| Priority date | — |
| Expiry date | Jul 15, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76229
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of reducing a chemical mechanical polishing (CMP) dishing effect. A plurality of trenches are formed in the substrate, while a first insulating layer, such as silicon oxide layer is formed on the substrate to fill those trenches. A chemical reaction, such as nitridation reaction, is performed on the surface of the insulating layer to form a second insulating layer, which is harder than the first insulating layer. CMP is then performed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.