Method of forming tungsten silicide film, method of fabricating semiconductor devices and semiconductor manufactured thereby
US6221771A · kind A · utility
3Cited by
4References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 8, 1998 |
| Grant date | Apr 24, 2001 |
| Priority date | — |
| Expiry date | Jul 8, 2018 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/42
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A silicon wafer is disposed in an inert gas atmosphere, and the temperature thereof is raised, and dichlorosilane is introduced to cause a surface reaction of the silicon wafer to occur, and then dichlorosilane to which WF.sub.6 is added is introduced so as to deposit tungsten silicide thinly on the above-mentioned silicon wafer. Next, the WF.sub.6 is stopped and the dichlorosilane is introduced, and after that, dichlorosilane to which WF.sub.6 is added is introduced so as to deposit the tungsten silicide, thus forming a tungsten silicide film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.