Dual damascene flowable oxide insulation structure and metallic barrier

US6221780A · kind A · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Stephen E. Greco · Lagrangeville, US
• John P. Hummel · Millbrook, US
• Joyce C. Liu · Carmel, US
• Vincent J. McGahay · Poughkeepsie, US
• Rebecca D. Mih · Wappingers Falls, US
• Kamalesh K. Srivastava · Wappingers Falls, US

Key dates

• Filing date: Sep 29, 1999
• Grant date: Apr 24, 2001
• Expiry date: Sep 29, 2019

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/7684
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method and structure for protecting a flowable oxide insulator in a semiconductor by oxidizing sidewalls of the FOX insulator, optionally nitridizing the oxidized FOX sidewalls, and then covering all surfaces of a trough or plurality of troughs in the FOX insulator, including the sidewalls, with a conductive secondary protective layer. In a multiple layer damascene structure, the surface of the FOX insulator is also oxidized, an additional oxide layer is deposited thereon, and a nitride layer deposited on the oxide layer. Then steps are repeated to obtain a comparable damascene structure. The materials can vary and each damascene layer may be either a single damascene or a dual damascene layer.