Storage capacitor having undulated lower electrode for a semiconductor device
US6222722A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 1, 1999 |
| Grant date | Apr 24, 2001 |
| Priority date | — |
| Expiry date | Apr 1, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/716
Abstract
This invention provides a capacitor including a metal lower electrode having an undulated shape and an improved electrode area, and a method of manufacturing the same. A capacitor for data storage is formed on a semiconductor substrate (not shown) via an insulating interlayer having a contact plug. The capacitor has a lower electrode whose inner and outer surfaces are rough or undulated such that one surface has a shape conforming to the shape of the other surface, a dielectric film formed to cover the surfaces of the lower electrode, and an upper electrode formed to cover the lower electrode via the dielectric film. The lower electrode has a cylindrical shape with an open upper end. The lower electrode is connected to a cell transistor through the contact plug. The lower electrode is formed from a metal or a metal oxide.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.