Method for fabricating a semiconductor structure having a crystalline alkaline earth metal oxide interface with silicon
US6224669A · kind A · utility
33Cited by
10References
36Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 14, 2000 |
| Grant date | May 1, 2001 |
| Priority date | — |
| Expiry date | Sep 14, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/684
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for fabricating a semiconductor structure comprises the steps of providing a silicon substrate (10) having a surface (12); forming on the surface of the silicon substrate an interface (14) comprising a single atomic layer of silicon, oxygen, and a metal; and forming one or more layers of a single crystal oxide (26) on the interface. The interface comprises an atomic layer of silicon, oxygen, and a metal in the form XSiO.sub.2, where X is a metal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.