Jay A. Curless
5Patents
4h-index
13Co-inventors
46Inventor score
Filing activity: Mar 22, 1999 → Jun 30, 2004
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6241821A | Method for fabricating a semiconductor structure having a crystalline alkaline earth metal oxide interface with silicon | Chemistry; Metallurgy | 38 | Expired |
| US6224669A | Method for fabricating a semiconductor structure having a crystalline alkaline earth metal oxide interface with silicon | Electricity | 33 | Expired |
| US6589856B2 | Method and apparatus for controlling anti-phase domains in semiconductor structures and devices | Electricity | 6 | Expired |
| US7141857B2 | Semiconductor structures and methods of fabricating semiconductor structures comprising hafnium oxide modified with lanthanum, a lanthanide-series metal, or a combination thereof | Electricity | 5 | Expired |
| US6852588B1 | Methods of fabricating semiconductor structures comprising epitaxial Hf3Si2 layers | Electricity | 0 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.