Aqueous ammonium fluoride and amine containing compositions for cleaning inorganic residues on semiconductor substrates
US6224785A · kind A · utility
51Cited by
18References
25Claims
0Family size
Assignee
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Key dates
| Filing date | Aug 29, 1997 |
| Grant date | May 1, 2001 |
| Priority date | — |
| Expiry date | Aug 29, 2017 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC11D2111/22
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
A semiconductor wafer cleaning formulation for use in post plasma ashing semiconductor fabrication comprising the following components in the percentage by weight ranges shown: Ammonium fluoride and/or a derivative thereof; 1-21% an organic amine or mixture of two amines; 20-55% water; 23-50% a metal chelating agent or mixture of chelating agents. 0-21%
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.