Rare-earth element-doped III-V compound semiconductor schottky diodes and device formed thereby
US6225200A · kind A · utility
1Cited by
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22Claims
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Key dates
| Filing date | Sep 11, 1998 |
| Grant date | May 1, 2001 |
| Priority date | — |
| Expiry date | Sep 11, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/64
Abstract
A semiconductor device has an improved schottky barrier junction. The device includes: a substrate; an epitaxial layer covering the substrate and lightly doped with a dopant selected from a group consisting of a rare earth element and an oxidant of a rare earth element; and a metal layer covering the epitaxial layer and forming said schottky barrier junction with said epitaxial layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.