Method for reforming undercoating surface and method for production of semiconductor device
US6225236A · kind A · utility
24Cited by
10References
16Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Jun 11, 1998 |
| Grant date | May 1, 2001 |
| Priority date | — |
| Expiry date | Jun 11, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76801
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
This invention is directed to a method for reforming an undercoating surface prior to the formation of a film by the CVD technique using a reaction gas containing an ozone-containing gas having ozone contained in oxygen and TEOS. It effects the reform of the surface by forming an undercoating insulating film on a substrate prior to the formation of film and exposing the surface of the undercoating insulating film to plasma gas.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.