Method of monitoring a patterned transfer process using line width metrology
US6225639A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 27, 1999 |
| Grant date | May 1, 2001 |
| Priority date | — |
| Expiry date | Aug 27, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A patterned transfer process in the manufacture of a semiconductor device is monitored. Patterned features formed on a semiconductor layer to be etched are scanned for generating a first amplitude modulated waveform intensity signal. The first amplitude modulated waveform intensity signal is sampled to extract a first measurement population of critical dimension measurements. The patterned features are etched and then scanned for generating a second amplitude modulated waveform intensity signal. The second amplitude modulated waveform intensity signal is then sampled to extract a second measurement population of critical dimension measurements, which are then cross-correlated to obtain correlation values of the etching process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.