GAN group crystal base member having low dislocation density, use thereof and manufacturing methods thereof
US6225650A · kind A · utility
131Cited by
8References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 24, 1998 |
| Grant date | May 1, 2001 |
| Priority date | — |
| Expiry date | Mar 24, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2304/12
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A GaN group crystal base member comprising a base substrate, a mask layer partially covering the surface of said base substrate to give a masked region, and a GaN group crystal layer grown thereon to cover the mask layer, which is partially in direct contact with the non-masked region of the base substrate, use thereof for a semiconductor element, manufacturing methods thereof and a method for controlling a dislocation line. The manufacturing method of the present invention is capable of making a part in the GaN group crystal layer, which is above a masked region or non-masked region, have a low dislocation density.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.