Method of manufacturing crystal of silicon using an electric potential
US6228165A · kind A · utility
13Cited by
7References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 28, 1999 |
| Grant date | May 8, 2001 |
| Priority date | — |
| Expiry date | Jul 28, 2019 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B15/10
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of manufacturing a crystal of silicon in accordance with a Czochralski method, includes the steps of applying an electric potential across a quartz crucible containing a silicon melt, and pulling a crystal of silicon from the silicon melt.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.