Masahiko Baba
12Patents
9h-index
16Co-inventors
65Inventor score
Filing activity: Oct 19, 1987 → Jul 28, 1999
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5240684A | Crystal diameter measuring device | Physics | 29 | Expired |
| US5170061A | Method of and apparatus for measuring oscillation of the outside diameter of a melt surface | Emerging Cross-Sectional Technologies | 26 | Expired |
| US4794263A | Apparatus for measuring crystal diameter | Emerging Cross-Sectional Technologies | 25 | Expired |
| US5138179A | Method of and device for diameter measurement used in automatically controlled crystal growth | Physics | 21 | Expired |
| US5183528A | Method of automatic control of growing neck portion of a single crystal by the CZ method | Emerging Cross-Sectional Technologies | 19 | Expired |
| US5089238A | Method of forming a temperature pattern of heater and silicon single crystal growth control apparatus using the temperature pattern | Emerging Cross-Sectional Technologies | 16 | Expired |
| US6228165A | Method of manufacturing crystal of silicon using an electric potential | Chemistry; Metallurgy | 13 | Expired |
| US5378900A | Crystal diameter measuring device | Emerging Cross-Sectional Technologies | 12 | Expired |
| US5129986A | Method for controlling specific resistance of single crystal and an apparatus therefor | Emerging Cross-Sectional Technologies | 12 | Expired |
| US6030451A | Two camera diameter control system with diameter tracking for silicon ingot growth | Emerging Cross-Sectional Technologies | 8 | Expired |
| US5269875A | Method of adjusting concentration of oxygen in silicon single crystal and apparatus for use in the method | Emerging Cross-Sectional Technologies | 5 | Expired |
| US5584930A | Method for measuring the diameter of a single crystal ingot | Emerging Cross-Sectional Technologies | 5 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.