Method of patterning photoresist using precision and non-precision techniques
US6228564A · kind A · utility
5Cited by
3References
10Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Aug 18, 1999 |
| Grant date | May 8, 2001 |
| Priority date | — |
| Expiry date | Aug 18, 2019 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S430/146
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method for patterning a layer of photoresist includes the steps of 1) exposing the photoresist through a standard precision mask to define all possible patterns and features, and 2) selecting desired patterns and features with a non-precision targeting energy beam or mask. Consequently, no custom precision masks are required to pattern the various layers of photoresist during the fabrication of application specific integrated circuits (ASICs), thereby reducing both the lead-time and costs for manufacturing ASICs.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.