Method of increasing the mobility of MOS transistors by use of localized stress regions
US6228694A · kind A · utility
230Cited by
2References
24Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 28, 1999 |
| Grant date | May 8, 2001 |
| Priority date | — |
| Expiry date | Jun 28, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of modifying the mobility of a transistor. First, a substance is implanted into a substrate. The substrate is then annealed such that the implanted substance forms at least one void in the substrate. Then, a transistor is formed on the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.