MOS technology power device with low output resistance and low capacitance, and related manufacturing process
US6228719A · kind A · utility
42Cited by
52References
19Claims
0Family size
Assignee
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Key dates
| Filing date | Jan 21, 1999 |
| Grant date | May 8, 2001 |
| Priority date | — |
| Expiry date | Jan 21, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/151
Abstract
A MOS-gated power device includes a plurality of elementary functional units, each elementary functional unit including a body region of a first conductivity type formed in a semiconductor material layer of a second conductivity type having a first resistivity value. Under each body region a respective lightly doped region of the second conductivity type is provided having a second resistivity value higher than the first resistivity value.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.