Method of manufacturing a capacitance semi-conductor device
US6228734A · kind A · utility
6Cited by
2References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 12, 1999 |
| Grant date | May 8, 2001 |
| Priority date | — |
| Expiry date | Jan 12, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/64
Abstract
A variable capacitance semiconductor device (10) such as a varactor diode, is formed to have a plurality of openings (13), such as a plurality of trenches, that cause the depletion regions (16) to overlap. This overlap results in a rapid change of capacitance for a given change of voltage, and allows efficient operation over a small voltage range.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.