Light extraction from a semiconductor light-emitting device via chip shaping
US6229160A · kind A · utility
153Cited by
9References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 3, 1997 |
| Grant date | May 8, 2001 |
| Priority date | — |
| Expiry date | Jun 3, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/81
Abstract
The invention is a method for designing semiconductor light emitting devices such that the side surfaces (surfaces not parallel to the epitaxial layers) are formed at preferred angles relative to vertical (normal to the plane of the light-emitting active layer) to improve light extraction efficiency and increase total light output efficiency. Device designs are chosen to improve efficiency without resorting to excessive active area-yield loss due to shaping. As such, these designs are suitable for low-cost, high-volume manufacturing of semiconductor light-emitting devices with improved characteristics.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.