MOS field effect transistor and its manufacturing method
US6229188A · kind A · utility
128Cited by
0References
22Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 5, 1995 |
| Grant date | May 8, 2001 |
| Priority date | — |
| Expiry date | Oct 5, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/314
Abstract
The present invention provides novel structures of MOS field effect transistor which operate with high speed and low power consumption. This has been achieved through providing epitaxial growth layers on a substrate of high impurity doping concentration in which the thickness of epitaxial growth layers is controlled with a degree of accuracy on the order of a single atom layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.