Semiconductor device and method of manufacturing the same
US6229211A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 29, 1999 |
| Grant date | May 8, 2001 |
| Priority date | — |
| Expiry date | Jul 29, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device comprises a base layer, a barrier metal layer formed on the base layer and a metal interconnect formed on the barrier metal layer, the barrier metal layer being made of at least one element .alpha. selected from metal elements and at least one element .beta. selected from a group of boron, oxygen, carbon and nitrogen and having at least two compound films .alpha..beta.n with different compositional ratios in atomic level arranged to form a laminate. When the elements .alpha. contained in the compound films .alpha..beta.n are same and identical and at least one of the at least two compound films .alpha..beta.n is a compound film .alpha..beta.x (x>1), the via resistance and the interconnect resistance of the device can be reduced, while maintaining the high barrier effect.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.