Apparatus for depositing thin films on semiconductor wafer by continuous gas injection
US6231672A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 18, 1999 |
| Grant date | May 15, 2001 |
| Priority date | — |
| Expiry date | May 18, 2019 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/45561
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
An apparatus for depositing thin films of a semiconductor device. The thin film deposition apparatus includes: a reactor maintained at a constant pressure; at least two reaction gas supply portions for supplying reaction gases to the reactor; an exhaust pump for discharging the gases out of the reaction gas supply portions and/or the reactor; first flow control valves installed between each reaction gas supply portion and the reactor, for controlling the amount of gases flowing between the reaction gas supply portions and the reactor; second flow control valves installed between each reaction gas supply portion and the exhaust pump, for controlling the amount of gases flowing between the reaction gas supply portions and the exhaust pump; an inert gas supply portion for supplying an inert gas into the reactor; reaction gas pipe lines, wherein the reaction gases provided from the reaction gas supply portions flow through the reaction gas pipe lines to the reactor and/or the exhaust pump; an inert gas pipe line, wherein the inert gas provided from the inert gas supply portion flows through the inert gas pipe line to the reactor; and a plurality of valves installed in the reaction gas …
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.