Multi-temperature processing
US6231776A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Sep 10, 1998 |
| Grant date | May 15, 2001 |
| Priority date | — |
| Expiry date | Sep 10, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05H1/46
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The present invention provides a technique, including a method and apparatus, for etching a substrate in the manufacture of a device. The apparatus includes a chamber and a substrate holder disposed in the chamber. The substrate holder has a selected thermal mass to facilitate changing the temperature of the substrate to be etched during etching processes. That is, the selected thermal mass of the substrate holder allows for a change from a first temperature to a second temperature within a characteristic time period to process a film. The present technique can, for example, provide different processing temperatures during an etching process or the like.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.