Relaxed InxGa(1-x)as buffers
US6232138A · kind A · utility
70Cited by
2References
26Claims
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Assignee
Inventors
Key dates
| Filing date | Nov 24, 1998 |
| Grant date | May 15, 2001 |
| Priority date | — |
| Expiry date | Nov 24, 2018 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/712
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In.sub.x Ga.sub.1-x As structures with compositionally graded buffers grown with organometallic vapor phase epitaxy (OMPVE) on GaAs substrates. A semiconductor structure and a method of processing such a structure including providing a substrate of GaAs; and epitaxially growing a relaxed graded layer of In.sub.x Ga.sub.1-x As at a temperature ranging upwards from about 600.degree. C.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.