Mayank Bulsara
18Patents
5h-index
9Co-inventors
59Inventor score
Filing activity: Nov 24, 1998 → Oct 7, 2019
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6232138A | Relaxed InxGa(1-x)as buffers | Emerging Cross-Sectional Technologies | 70 | Expired |
| US6594293B1 | Relaxed InxGa1-xAs layers integrated with Si | Electricity | 21 | Expired |
| US6891209B2 | Dynamic random access memory trench capacitors | Electricity | 11 | Expired |
| US7172935B2 | Method of forming multiple gate insulators on a strained semiconductor heterostructure | Electricity | 5 | Expired |
| US6589335B2 | Relaxed InxGa1-xAs layers integrated with Si | Electricity | 5 | Expired |
| US6849508B2 | Method of forming multiple gate insulators on a strained semiconductor heterostructure | Electricity | 5 | Expired |
| US7594967B2 | Reduction of dislocation pile-up formation during relaxed lattice-mismatched epitaxy | Emerging Cross-Sectional Technologies | 3 | Expired |
| US6495868B2 | Relaxed InxGa1−xAs buffers | Emerging Cross-Sectional Technologies | 3 | Expired |
| US7408214B2 | Dynamic random access memory trench capacitors | Electricity | 2 | Expired |
| US8253181B2 | Strained channel dynamic random access memory devices | Electricity | 2 | Active |
| US7410861B2 | Methods of forming dynamic random access memory trench capacitors | Electricity | 1 | Expired |
| US7494881B2 | Methods for selective placement of dislocation arrays | Emerging Cross-Sectional Technologies | 1 | Active |
| US9153591B2 | Strained channel dynamic random access memory devices | Electricity | 1 | Active |
| US8890226B2 | Strained channel dynamic random access memory devices | Electricity | 1 | Active |
| US10475696B2 | Method of manufacture of a semiconductor on insulator structure | Electricity | 0 | Active |
| US10796946B2 | Method of manufacture of a semiconductor on insulator structure | Electricity | 0 | Active |
| US9508724B2 | Strained channel dynamic random access memory devices | Electricity | 0 | Active |
| US8441055B2 | Methods for forming strained channel dynamic random access memory devices | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.