Method of making a floating gate memory cell

US6232185A · kind A · utility

Assignee

• Integrated Memory Technologies, Inc. · US

Inventor

• Ching Dong Wang · Singapore, SG

Key dates

• Filing date: May 15, 2000
• Grant date: May 15, 2001
• Expiry date: May 15, 2020

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/035

Abstract

A method for making a non-volatile memory cell having a select gate, a floating gate and a control gate of the completely self-aligned type, partially self-aligned type and non-aligned type is disclosed. Further, each of the three types of cells has a floating gate, whose linear dimension can be increased beyond the smallest lithographic feature of the process design rule