Method for fabricating a semiconductor component having a low contact resistance with respect to heavily doped zones

US6232220A · kind A · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Volker Penka · Unterhaching, DE
• Reinhard Mahnkopf · Oberhaching, DE
• Helmut Wurzer · Dresden, DE

Key dates

• Filing date: Jan 15, 1999
• Grant date: May 15, 2001
• Expiry date: Jan 15, 2019

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/28512
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method for fabricating a semiconductor component having a low contact resistance with respect to heavily doped or siliconized zones in a semiconductor body. Fluorine ions are implanted into the heavily doped or siliconized zone in the vicinity of a contact hole before a titanium layer is applied to the heavily doped or siliconized zone in the vicinity of the contact hole. As a result of the fluorine, any oxide layers present in the contact hole region can be broken up by less titanium, with the result that a thinner titanium layer is sufficient. In addition, the formation of titanium silicide in the contact hole is promoted.