Method for making semiconductor device
US6232227A · kind A · utility
15Cited by
1References
12Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jan 18, 2000 |
| Grant date | May 15, 2001 |
| Priority date | — |
| Expiry date | Jan 18, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/28518
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In this method, metal film to be subject to silicidation includes impurity to have the same conductivity mechanism as an element that is in advance ion-implanted into abase layer, therefore the absorption of impurity into the metal film is difficult to incur during the silicidation reaction. Even after forming the silicide self-aligned, the surface impurity concentration at the gate or diffusion layer can be kept high, thus preventing the device characteristic from deteriorating.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.