Pre-oxidation cleaning method for reducing leakage current of ultra-thin gate oxide
US6232241A · kind A · utility
6Cited by
9References
16Claims
0Family size
Assignee
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Key dates
| Filing date | Apr 11, 2000 |
| Grant date | May 15, 2001 |
| Priority date | — |
| Expiry date | Apr 11, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A new method of pre-oxidation cleaning of a substrate surface is described. The surface of a semiconductor substrate of a wafer is cleaned using a multiple step cleaning process wherein the final step of the cleaning process comprises cleaning with a solution of H.sub.2 SO.sub.4 and H.sub.2 O.sub.2 whereby a chemical oxide initial layer is formed on the surface of the wafer. Thereafter, the surface of the wafer is oxidized to form a thermal oxide layer wherein the chemical oxide layer and the thermal oxide layer together form a gate oxide layer in the fabrication of an integrated circuit.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.