InPSb channel HEMT on InP for RF application
US6232624A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 12, 1999 |
| Grant date | May 15, 2001 |
| Priority date | — |
| Expiry date | Jul 12, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/4755
Abstract
A high electron mobility transistor (HEMT) includes a substrate comprising indium phosphide and an optional buffer layer immediately adjacent the substrate. A channel layer immediately is adjacent the buffer layer, with the channel layer comprising indium phosphide antimonide and characterized by a formula of InP.sub.x Sb.sub.(1-x), wherein x is about 0.85. The channel layer has a thickness of about 120 Angstroms. A Schottky layer is immediately adjacent the channel layer and a contact layer is immediately adjacent the Schottky layer. The transistor is characterized by a breakdown field of about 400 kV/cm and a saturated velocity of about 8.2.times.10.sup.6 cm/s.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.