Daniel P. Docter
11Patents
6h-index
7Co-inventors
51Inventor score
Filing activity: May 21, 1997 → Jun 3, 2003
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6229189A | Multi-function optoelectronic device structure | Electricity | 25 | Expired |
| US6287946A | Fabrication of low resistance, non-alloyed, ohmic contacts to InP using non-stoichiometric InP layers | Electricity | 17 | Expired |
| US6482711B1 | InPSb/InAs BJT device and method of making | Electricity | 13 | Expired |
| US6232624A | InPSb channel HEMT on InP for RF application | Electricity | 13 | Expired |
| US6670653B1 | InP collector InGaAsSb base DHBT device and method of forming same | Electricity | 9 | Expired |
| US6583455B1 | Fabrication of low resistance, non-alloyed, OHMIC contacts to INP using non-stoichiometric INP layers | Electricity | 6 | Expired |
| US6806512B2 | InPSb/InAs BJT device and method of making | Electricity | 1 | Expired |
| US6444552B1 | Method of reducing the conductivity of a semiconductor and devices made thereby | Emerging Cross-Sectional Technologies | 1 | Expired |
| US6214678A | Growth technique for low noise high electron mobility transistors by metal organic vapor phase epitaxy | Emerging Cross-Sectional Technologies | 1 | Expired |
| US6894325B2 | Fabrication of low resistance, non-alloyed, ohmic contacts to InP using non-stoichiometric InP layers | Electricity | 0 | Expired |
| US6897132B2 | Method of reducing the conductivity of a semiconductor and devices made thereby | Emerging Cross-Sectional Technologies | 0 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.