Method for mask repair using defect compensation
US6235434A · kind A · utility
43Cited by
3References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 8, 1998 |
| Grant date | May 22, 2001 |
| Priority date | — |
| Expiry date | Dec 8, 2018 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/72
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A method for repair of amplitude and/or phase defects in lithographic masks. The method involves modifying or altering a portion of the absorber pattern on the surface of the mask blank proximate to the mask defect to compensate for the local disturbance (amplitude or phase) of the optical field due to the defect.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.