EUV LLC.
78Patents
3Active
78Granted
38Portfolio score
Filing activity: Feb 27, 1998 → Jun 30, 2006 · 3 expiring within 5 years
Most-cited patents
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6031598A | Extreme ultraviolet lithography machine | Physics | 73 | Expired |
| US6333775A | Extreme-UV lithography vacuum chamber zone seal | Physics | 59 | Expired |
| US6285737A | Condenser for extreme-UV lithography with discharge source | Physics | 57 | Expired |
| US6235434A | Method for mask repair using defect compensation | Physics | 43 | Expired |
| US6188150A | Light weight high-stiffness stage platen | Emerging Cross-Sectional Technologies | 37 | Expired |
| US6253464A | Method for protection of lithographic components from particle contamination | Physics | 36 | Expired |
| US6492067B1 | Removable pellicle for lithographic mask protection and handling | Physics | 36 | Expired |
| US6469827B1 | Diffraction spectral filter for use in extreme-UV lithography condenser | Physics | 35 | Expired |
| US6815129B1 | Compensation of flare-induced CD changes EUVL | Physics | 33 | Expired |
| US6353271B1 | Extreme-UV scanning wafer and reticle stages | Physics | 33 | Expired |
| US6153044A | Protection of lithographic components from particle contamination | Physics | 32 | Expired |
| US6780496B2 | Optimized capping layers for EUV multilayers | Emerging Cross-Sectional Technologies | 29 | Expired |
| US6821682B1 | Repair of localized defects in multilayer-coated reticle blanks for extreme ultraviolet lithography | Physics | 29 | Expired |
| US6072157A | Thermophoretic vacuum wand | Emerging Cross-Sectional Technologies | 22 | Expired |
| US6396068B1 | Illumination system having a plurality of movable sources | Physics | 21 | Expired |
| US6225027A | Extreme-UV lithography system | Emerging Cross-Sectional Technologies | 20 | Expired |
| US6664554B2 | Self-cleaning optic for extreme ultraviolet lithography | Physics | 19 | Expired |
| US6714624B2 | Discharge source with gas curtain for protecting optics from particles | Electricity | 18 | Expired |
| US6198792A | Wafer chamber having a gas curtain for extreme-UV lithography | Physics | 17 | Expired |
| US6844272B2 | Correction of localized shape errors on optical surfaces by altering the localized density of surface or near-surface layers | Physics | 16 | Expired |
| US6967168B2 | Method to repair localized amplitude defects in a EUV lithography mask blank | Physics | 15 | Expired |
| US6210865A | Extreme-UV lithography condenser | Emerging Cross-Sectional Technologies | 14 | Expired |
| US6835415B2 | Compliant layer chucking surface | Electricity | 12 | Expired |
| US6772776B2 | Apparatus for in situ cleaning of carbon contaminated surfaces | Emerging Cross-Sectional Technologies | 12 | Expired |
| US7147722B2 | Method for in-situ cleaning of carbon contaminated surfaces | Emerging Cross-Sectional Technologies | 12 | Expired |
Source: USPTO / EPO open patent data. Counts and citation impact are objective bibliographic measures.