Seed metal delete process for thin film repair solutions using direct UV laser
US6235544A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 20, 1999 |
| Grant date | May 22, 2001 |
| Priority date | — |
| Expiry date | Apr 20, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/485
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A multilayer thin film structure (MLTF) is provided having no extraneous via-pad connection strap plated metallurgy for defective vias needing removal. The method for making or repairing the MLTF comprises determining interconnection defects in the MLTF at a thin film layer adjacent to the top metal layer of the structure, applying a top surface dielectric layer and forming vias in the layer, applying a metal conducting layer and removing the metal conducting layer for via-pad connection straps of defective vias and at the intersection of XY lines used in the repair, defining the top surface metallization including a series of orthogonal X conductor repair lines and Y conductor repair lines using a photoresist and lithography and then using a phototool to selectively expose the photoresist to define top surface strap connections needed to repair the interconnections and/or make EC's, and forming the top surface metallization using additive or subtractive metallization techniques.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.