Semiconductor device having deposited silicon regions and a method of fabrication
US6235568A · kind A · utility
182Cited by
9References
30Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 22, 1999 |
| Grant date | May 22, 2001 |
| Priority date | — |
| Expiry date | Jan 22, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
Abstract
The present invention describes an MOS device having deposited silicon regions and its a method of fabrication. In one embodiment of the present invention a substrate having a thin oxide layer formed on a silicon surface is heated and exposed to an ambient comprising germane (GeH.sub.4) to remove the thin oxide from the silicon surface. A silicon or silicon alloy film can then be deposited onto the silicon surface of the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.