Light emitting structures in back-end of line silicon technology
US6236060A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 19, 1997 |
| Grant date | May 22, 2001 |
| Priority date | — |
| Expiry date | Nov 19, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/813
Abstract
A light emitting device is disclosed comprising a bottom layer of electrically conductive material. A block of electrically insulating material is disposed on the bottom layer. At least a portion of the block is optically transparent. A top layer of electrically conductive material is disposed on the block. A plurality of discrete nano-crystals of a material selected from the group consisting of Group IV, Group III-V, and Group II-VI is disposed within the block, and are thereby electrically insulated from the top and bottom layers. Also provided are bottom and top electrodes connected to the bottom and top layers, respectively, for applying a voltage therebetween.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.