Insulated-gate thyristor

US6236069A · kind A · utility

Assignee

• Kabushiki Kaisha Toshiba · JP

Inventors

• Takashi Shinohe · Yokosuka, JP
• Kazuya Nakayama · Sagamihara, JP
• Minami Takeuchi · Tokyo, JP
• Masakazu Yamaguchi · Kawasaki, JP
• Mitsuhiko Kitagawa · Tokyo, JP
• Ichiro Omura · Zürich, CH
• Akio Nakagawa · Hiratsuka, JP

Key dates

• Filing date: Jun 23, 1998
• Grant date: May 22, 2001
• Expiry date: Jun 23, 2018

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/291

Abstract

Disclosed herein is an insulated-gate thyristor comprising a base layer of a first conductivity type, having first and second major surfaces, a first main-electrode region of the first conductivity type, formed in the first major surface of the base layer, a second main-electrode region of a second conductivity type, formed in the second major surface of the base layer, at least a pair of grooves extending from the first main-electrode region into the base layer, and opposing each other and spaced apart by a predetermined distance, insulated gate electrodes formed within the grooves, and a turn-off insulated-gate transistor structure for releasing carriers of the second conductivity type from the base layer.