Semiconductor integrated circuit device having double diffusion insulated gate field effect transistor
US6236084A · kind A · utility
11Cited by
10References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 26, 1999 |
| Grant date | May 22, 2001 |
| Priority date | — |
| Expiry date | May 26, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/157
Abstract
To provide a lateral double diffusion insulated gate field effect transistor with high driving current and low source-drain withstand voltage without receiving the influence of process fluctuation. Without shortening a gate electrode 10 as compared with conventional one, an impurity of the same conductivity type as a drain is ion-implanted from the side of a high concentration drain region 20 by using the gate electrode as a mask in a self-aligning manner. The amount of impurity implantation is set as higher than the concentration of a semiconductor substrate 19.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.