High voltage boosted word line supply charge pump and regulator for DRAM
US6236581A · kind A · utility
127Cited by
14References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 14, 2000 |
| Grant date | May 22, 2001 |
| Priority date | — |
| Expiry date | Jan 14, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH02M3/07
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A circuit for providing an output voltage for a DRAM word line which can be used to drive memory word lines which can be as high as 2V.sub.dd. Transistors in a boosting circuit are fully switched, eliminating the reduction of the boosting voltage by V.sub.tn as in the prior art. The boosting capacitors are charged by V.sub.dd, thus eliminating drift tracking problems associated with clock boosting sources and V.sub.dd. A regulator detects conduction current of a replica of a memory cell access transistor, shutting off the boosting circuit clock oscillator when the correct voltage to operate the access transistor has been reached.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.