Synchronous dynamic random access memory semiconductor device having write-interrupt-write function
US6236619A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 27, 2000 |
| Grant date | May 22, 2001 |
| Priority date | — |
| Expiry date | Apr 27, 2020 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C7/22
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A synchronous dynamic random access memory (SDRAM) semiconductor device is provided. The SDRAM has a write-interrupt-write function and includes a first memory block for storing data, a first sense amplifier for sensing the data stored in the first memory block, first and second groups of input/output lines, connected to the first sense amplifier, and a write-interrupt-write signal generating portion for receiving an externally input write signal and an internal clock signal to generate a write-interrupt-write signal, and for providing the write-interrupt-write signal to the first sense amplifier. When an externally input data is written to the first memory block through the first group of input/output lines in response to the write signal enabled at a first point in time and the write signal is enabled at a second point in time to write data to the first memory block through the second group of input/output lines, the write-interrupt write signal generator enables the write-interrupt-write signal after a predetermined number of cycles of the internal clock signal from the second point in time at which the write signal is enabled, thereby immediately precharging the first group of …
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.